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PD - 97067
IRLR8713PbF IRLU8713PBF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
G
HEXFET(R) Power MOSFET
VDSS
25V
D
RDS(on) max
4.8m:
D
Qg
17.4nC
G
D
S G D
S
D-Pak IRLR8713PbF
I-Pak IRLU8713PBF
D
S
Gate
Drain
Max.
25 20 100f 72f 410 81 40 0.54 -55 to + 175
Source
Units
V
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
A W W/C C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case
h
Typ.
Max.
1.86 50 110
Units
C/W
Junction-to-Ambient (PCB Mount) Junction-to-Ambient
h
ghA
--- --- ---
Notes through are on page 10
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1
12/7/05
IRLR/U8713PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
25 --- --- --- 1.35 --- --- --- --- --- 79 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 16 3.8 5.0 1.85 -7.0 --- --- --- --- --- 17.4 4.0 2.2 5.8 5.4 8.0 8.6 0.9 14 24 12 5.9 2240 580 270 --- V
Conditions
VGS = 0V, ID = 250A
--- mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 21A 4.8 6.3 2.35 1.0 150 100 -100 --- 26 --- --- --- --- --- --- 1.6 --- --- --- --- --- --- --- pF VGS = 0V VDS = 13V = 1.0MHz ns nC VDD = 13V, VGS = 4.5Ve ID = 17A Clamped Inductive Load VDS = 10V, VGS = 0V nC VDS = 13V VGS = 4.5V ID = 17A See Fig.16 S nA V A --- mV/C VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 17A VGS = 4.5V, ID = 17A
e e
VDS = VGS, ID = 50A
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 190 17 8.1 Units mJ A mJ
--- --- --- --- --- --- --- --- 16 15
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
100f A 410 1.0 24 23 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G
D
S
p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A, VDD = 13V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U8713PbF
1000
TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V 60s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
2.5V
0.1 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
100
TJ = 175C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 42A VGS = 10V
1.5
10
TJ = 25C
1
1.0
VDS = 15V
0.1 1.0 2.0 3.0
60s PULSE WIDTH
4.0 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLR/U8713PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12 ID= 17A 10 8 6 4 2 0 VDS = 21V VDS= 13V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100 1 10 100
0
10
20
30
40
VDS , Drain-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
TJ = 175C
1000 100sec 1msec
100
10
TJ = 25C
1
10 10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100
VGS = 0V
0.1 0.2 0.6 1.0 1.4 1.8 2.2
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8713PbF
100
2.4
80
ID , Drain Current (A)
VGS(th) Gate threshold Voltage (V)
LIMITED BY PACKAGE
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175
60
ID = 50A
40
20
0 25 50 75 100 125 150 175 TC , Case Temperature (C)
TJ, Temperature ( C )
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
J J 1 1
R1 R1 2
R2 R2
R3 R3 C 3
Ri (C/W)
(sec)
2
3
0.01
Ci= i/Ri Ci= i/Ri
0.382809 0.000148 0.927748 0.0013 0.550944 0.009343
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8713PbF
m RDS (on), Drain-to -Source On Resistance ( )
16
800
ID = 21A
12
EAS, Single Pulse Avalanche Energy (mJ)
600
ID 7.1A 9.2A BOTTOM 17A
TOP
8
TJ = 125C
400
4
TJ = 25C
0 2.0 4.0 6.0 8.0 10.0
200
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 14a. Unclamped Inductive Test Circuit
LD VDS
Fig 14b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRLR/U8713PbF
Current Regulator Same Type as D.U.T.
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
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IRLR/U8713PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A"
N ote: "P" in assembly line position indicates "Lead-Free"
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE
PART NUMBER
IRFR120 916A 12 34
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE
PART NUMBER
IRFR120 12 P916A 34
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE
8
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IRLR/U8713PbF
I-Pak (TO-251AA) Package Outline
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER
IRFU120 919A 56 78
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE
PART NUMBER
IRFU120 56 78
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE
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9
IRLR/U8713PbF
Dimensions are shown in millimeters (inches)
TR
D-Pak (TO-252AA) Tape & Reel Information
TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A.
max. junction temperature. Starting TJ = 25C, L = 0.77mH, RG = 25, IAS = 17A. Pulse width 400s; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately at 90C
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/05
10
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